cystech electronics corp. spec. no. : c700a3 issued date : 2013.09.25 revised date page no. : 1/6 BCR1003A3 cystek product specification pnpn epitaxial planar scr BCR1003A3 descriptions the BCR1003A3 is designed for high volume consumer a pplications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. features ? practical level triggering and holding characteristics ? on state current rating of 0.35a rms ? sensitive gate allows triggering by microcontrollers and other logic circuits ? pb-free lead plating and halogen-free package symbol outline ordering information BCR1003A3 to-92 device package shipping BCR1003A3-0-tb-g to-92 (pb-free lead plating and halogen-free package) 2000 pcs / tape & box BCR1003A3-0-bk-g to-92 (pb-free lead plating and halogen-free package) 1000 pcs/ bag, 10 bags/box, 10boxes/carton g gate a anode k cathode g a k environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, tb :2000 pcs/tape & box; bk: 1000 pcs / bag, 10 bags/box, 10 boxes/carton product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c700a3 issued date : 2013.09.25 revised date page no. : 2/6 BCR1003A3 cystek product specification absolute maximum ratings (t j =25 c) parameter symbol limits unit peak repetitive off-state voltage @t j =-40 to 125 , r gk =1k v drm 140 v on-state current @t c =80 i t(rms) 350 ma average on-state current @ t c =80 i t(av) 220 ma peak non-repetitive surge current, half cycle, sine wave, 60hz i tsm 4 a circuit fusing consideration (t=8.3ms) i 2t 0.2 a 2s reverse peak gate voltage @t a =25 , pulse width 1 s v grm 8 v forward peak gate current @t a =25 , pulse width 1 s i gm 500 ma forward average gate power @ t a =25 , t=8.3ms p g(av) 100 mw thermal resistance, junction to ambient r ja 200 c/w thermal resistance, junction to case r jc 75 c/w junction temperature tj -40~+125 c storage temperature tstg -40~+150 c lead solder temperature(<1/16? from case, 10secs max) t l 260 c note : stress exceeding maximum ratings may damage the de vice. maximum ratings are st ress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. v drm can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however , positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltage shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. characteristics (ta=25 c) symbol min. typ. max. unit test conditions i drm - - 100 a v d =140v, r gk =1k , t c =125 i drm - - 10 a v d =140v, r gk =1k , t c =25 *v tm - - 1.5 v i tm =200ma i gt - - 100 a v d =7v, r l =100 i h - - 3 ma v d =7v, r gk =1k i l - - 6 ma v d =7v, i g =200 a v gt - - 0.8 v v d =7v, r l =100 dv/dt 25 - - v/ s v d =35v, r gk =1k di/dt 30 - - a/ s i g =10ma, di g /dt=100ma/ s, p w =10 s *pulse test: pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c700a3 issued date : 2013.09.25 revised date page no. : 3/6 BCR1003A3 cystek product specification typical characteristics gate trigger current vs junction temperature 0 10 20 30 40 50 60 70 -50 -25 0 25 50 75 100 125 junctiontemperature---t j () gate trigger current---i gt ( a) gate trigger voltage vs junction temperature 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -50-250 255075100125 junction temperature---t j (c) gate trigger voltage---v gt (v) holding current vs junction temperature 0.1 1 10 -50 -25 0 25 50 75 100 125 junction temperature---t j (c) holding current---i h (ma) latching current vs junction temperature 10 100 1000 -50 -25 0 25 50 75 100 125 junction temperature---t j (c) latching current---i l ( a) on-state characteristics 10 100 1000 00.40.81.21.62 instantaneous on-state voltage---v t (v) instantaneous on-state current---i t (ma) t j =-40c t j =25c t j =125c
cystech electronics corp. spec. no. : c700a3 issued date : 2013.09.25 revised date page no. : 4/6 BCR1003A3 cystek product specification to-92 taping outline millimeters dim item min. max. a component body height 4.33 4.83 d tape feed diameter 3.80 4.20 h2a h2a h2 h2 d2 a h w w1 h3 h4 h1 l1 l p2 p p1 f1 f2 d1 d t2 t t1 d1 lead diameter 0.36 0.53 d2 component body diameter 4.33 4.83 f1,f2 component lead pitch 2.40 2.90 f1,f2 f1-f2 - 0.3 h height of seating plane 15.50 16.50 h1 feed hole location 8.50 9.50 h2 front to rear deflection - 1 h2a deflection left or right - 1 h3 component height - 27 h4 feed hole to bottom of component - 21 l lead length after component removal - 11 l1 lead wire enclosure 2.50 - p feed hole pitch 12.50 12.90 p1 center of seating plane location 5.95 6.75 p2 4 feed hole pitch 50.30 51.30 t over all tape thickness - 0.55 t1 total taped package thickness - 1.42 t2 carrier tape thickness 0.36 0.68 w tape width 17.50 19.00 w1 adhesive tape width 5.00 7.00 - 20 pcs pitch 253 255
cystech electronics corp. spec. no. : c700a3 issued date : 2013.09.25 revised date page no. : 5/6 BCR1003A3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds temperature(tp) 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c700a3 issued date : 2013.09.25 revised date page no. : 6/6 BCR1003A3 cystek product specification to-92 dimension *: typical r1003 3 1 a d b c i 1 e f 2 3 g h 2 3-l ead t o -9 2 plastic pa ckag e cys t ek pa ck a g e code: a 3 s t yle: pin 1.g a te 2.anode 3.catho de date code: y ear+month y ear: 4 2004, 5 20 05 month: 1 1, 2 2, ??? , 9 9, a 10, b 11 , c 12 product name marking: i n c h e s m i l l i m e t e r s i n c h e s m i l l i m e t e r s dim m i n . m a x . m i n . m a x . dim m i n . m a x . m i n . m a x . a 0 . 1 7 0 4 0 . 1 9 0 2 4 . 3 3 4 . 8 3 g 0.0142 0 . 0 2 2 0 0 . 3 6 0 . 5 6 b 0 . 1 7 0 4 0 . 1 9 0 2 4 . 3 3 4 . 8 3 h - * 0 . 1 0 0 0 - * 2.54 c 0 . 5 0 0 0 - 1 2 . 7 0 - i - * 0 . 0 5 0 0 - * 1.27 d 0 . 0 1 4 2 0 . 0 2 2 0 0 . 3 6 0 . 5 6 1 - * 5 - * 5 e - * 0 . 0 5 0 0 - * 1.27 2 - * 2 - * 2 f - 0 . 1 3 2 3 0 . 1 4 8 0 3 . 3 6 3 . 7 6 3 - * 2 * 2 note s: 1.controlling dimension: millimeter s. 2.maximum lead thickness include s lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is an y q uestion w i th p a ck ing specification or p a cking metho d , please c ont act y our local c y s t ek sales of fice. material: ? lead: pur e tin plated. ? mold compou n d : epoxy resin fa mily , flammabilit y solid burning cla ss: ul94v -0. im portan t n o tice : ? all rights are re served. reprod u c tion in w hole or in part is prohibited w i thout the p r ior w r itten a pprov al of c y stek. ? c y stek reserv es the right to m a ke changes to its products w i tho u t notice. ? cy st e k semic ond uct o r pr odu cts are n o t warr ante d t o be s u it able f o r use i n l i fe-su p p o rt a p p licatio ns, or sys tems. ? c y stek assumes no liability fo r an y consequenc e of customer pr oduct design, infringement of pat e n ts, or application assistance .
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